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The SISPAD Conference provides an open forum for showcasing the latest
advances in modeling & simulation of semiconductor devices & process.


Original contributions are solicited on topics that include but are not limited to:

  • Modeling and simulation of established semiconductor devices, including
    FinFETs, GAA FETs, ultra-thin SOI devices, optoelectronic devices, TFTs,
    sensors, power electronic devices, and organic electronic devices

  • Modeling and simulation of emerging devices including tunnel FETs, SETs,
    spintronic devices, straintronic devices, bio-electronic devices, quantum
    computing devices, and new material-based devices for various applications

  • Modeling and simulation of all sorts of semiconductor processes, including first
    principles material design, and growth simulation of nano-scale fabrication

  • Advances in fundamental aspects of device modeling and simulation, including
    of charge, spin, and thermal transport, of collective states including
    spin/magnetic and charge, and of fluctuation, noise, and reliability.

  • Numerical methods and algorithms, including grid generation, user-interface,
    and visualization

  • Compact modeling for circuit simulation, including low-power, high frequency,
    and power electronics applications

  • Process/device/circuit co-simulation in context with system design and
    verification, including for emerging devices

  • Modeling and simulation of equipment, topography, lithography

  • Thermal/mechanical simulation & characterization at component, board, and
    system levels for all packaging technologies

  • Modeling and simulation of interconnects for chiplets, heterogenous integration,
    hybrid bonding, 2.5D/3D & other advanced packaging schemes

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