Scope:
The SISPAD Conference provides an open forum for showcasing the latest
advances in modeling & simulation of semiconductor devices & process.
Topics:
Original contributions are solicited on topics that include but are not limited to:
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Modeling and simulation of established semiconductor devices, including
FinFETs, GAA FETs, ultra-thin SOI devices, optoelectronic devices, TFTs,
sensors, power electronic devices, and organic electronic devices
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Modeling and simulation of emerging devices including tunnel FETs, SETs,
spintronic devices, straintronic devices, bio-electronic devices, quantum
computing devices, and new material-based devices for various applications
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Modeling and simulation of all sorts of semiconductor processes, including first
principles material design, and growth simulation of nano-scale fabrication
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Advances in fundamental aspects of device modeling and simulation, including
of charge, spin, and thermal transport, of collective states including
spin/magnetic and charge, and of fluctuation, noise, and reliability.
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Numerical methods and algorithms, including grid generation, user-interface,
and visualization
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Compact modeling for circuit simulation, including low-power, high frequency,
and power electronics applications
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Process/device/circuit co-simulation in context with system design and
verification, including for emerging devices
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Modeling and simulation of equipment, topography, lithography
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Thermal/mechanical simulation & characterization at component, board, and
system levels for all packaging technologies
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Modeling and simulation of interconnects for chiplets, heterogenous integration,
hybrid bonding, 2.5D/3D & other advanced packaging schemes